標題: Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
作者: Simanjuntak, Firman Mangasa
Singh, Pragya
Chandrasekaran, Sridhar
Lumbantoruan, Franky Juanda
Yang, Chih-Chieh
Huang, Chu-Jie
Lin, Chun-Chieh
Tseng, Tseung-Yuen
材料科學與工程學系
資訊工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Computer Science
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistive switching;electrochemical metallization device;nanorods;RRAM
公開日期: 1-Dec-2017
摘要: An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (> 10(4) cycles) with a sufficient memory window (10(3) times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.
URI: http://dx.doi.org/10.1088/1361-6641/aa9598
http://hdl.handle.net/11536/144072
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aa9598
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 32
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