標題: Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory
作者: Su, Po-Cheng
Hsu, Chun-Chi
Du, Sin-I
Wang, Tahui
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 7-Dec-2017
摘要: Read operation induced disturbance in SET-state in a tungsten oxide resistive switching memory is investigated. We observe that the reduction of oxygen vacancy density during read-disturb follows power-law dependence on cumulative read-disturb time. Our study shows that the SET-state read-disturb immunity progressively degrades by orders of magnitude as SET/RESET cycle number increases. To explore the cause of the read-disturb degradation, we perform a constant voltage stress to emulate high-field stress effects in SET/RESET cycling. We find that the read-disturb failure time degradation is attributed to high-field stress-generated oxide traps. Since the stress-generated traps may substitute for some of oxygen vacancies in forming conductive percolation paths in a switching dielectric, a stressed cell has a reduced oxygen vacancy density in SET-state, which in turn results in a shorter read-disturb failure time. We develop an analytical read-disturb degradation model including both cycling induced oxide trap creation and read-disturb induced oxygen vacancy reduction. Our model can well reproduce the measured read-disturb failure time degradation in a cycled cell without using fitting parameters. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.5009042
http://hdl.handle.net/11536/144200
ISSN: 0021-8979
DOI: 10.1063/1.5009042
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 122
Appears in Collections:Articles