標題: Effect of Sputtered AlN Location on the Growth Mechanism of GaN
作者: Wu, Pei-Yu
Li, Jhen-Hong
Hsu, Lung-Hsing
Huang, Chia-Yen
Cheng, Yuh-Jen
Kuo, Hao-Chung
Wu, YewChung Sermon
材料科學與工程學系
照明與能源光電研究所
光電工程學系
Department of Materials Science and Engineering
Institute of Lighting and Energy Photonics
Department of Photonics
公開日期: 1-Jan-2017
摘要: Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail. (c) 2017 The Electrochemical Society. All rights reserved.
URI: http://dx.doi.org/10.1149/2.0211709jss
http://hdl.handle.net/11536/144252
ISSN: 2162-8769
DOI: 10.1149/2.0211709jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 6
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