標題: | Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication |
作者: | Chen, Hong-Yu Brivio, Stefano Chang, Che-Chia Frascaroli, Jacopo Hou, Tuo-Hung Hudec, Boris Liu, Ming Lv, Hangbing Molas, Gabriel Sohn, Joon Spiga, Sabina Teja, V. Mani Vianello, Elisa Wong, H. -S. Philip 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Resistive random access memory (RRAM);Resistive switching device;3D integration;Selector;Bottom-up fabrication |
公開日期: | 1-十二月-2017 |
摘要: | Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced. |
URI: | http://dx.doi.org/10.1007/s10832-017-0095-9 http://hdl.handle.net/11536/144329 |
ISSN: | 1385-3449 |
DOI: | 10.1007/s10832-017-0095-9 |
期刊: | JOURNAL OF ELECTROCERAMICS |
Volume: | 39 |
起始頁: | 21 |
結束頁: | 38 |
顯示於類別: | 期刊論文 |