標題: Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
作者: Chen, Hong-Yu
Brivio, Stefano
Chang, Che-Chia
Frascaroli, Jacopo
Hou, Tuo-Hung
Hudec, Boris
Liu, Ming
Lv, Hangbing
Molas, Gabriel
Sohn, Joon
Spiga, Sabina
Teja, V. Mani
Vianello, Elisa
Wong, H. -S. Philip
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistive random access memory (RRAM);Resistive switching device;3D integration;Selector;Bottom-up fabrication
公開日期: 1-Dec-2017
摘要: Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.
URI: http://dx.doi.org/10.1007/s10832-017-0095-9
http://hdl.handle.net/11536/144329
ISSN: 1385-3449
DOI: 10.1007/s10832-017-0095-9
期刊: JOURNAL OF ELECTROCERAMICS
Volume: 39
起始頁: 21
結束頁: 38
Appears in Collections:Articles