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dc.contributor.authorChauhan, Ram Narayanen_US
dc.contributor.authorTiwari, Nidhien_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.date.accessioned2018-08-21T05:53:10Z-
dc.date.available2018-08-21T05:53:10Z-
dc.date.issued2018-03-01en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matlet.2017.12.020en_US
dc.identifier.urihttp://hdl.handle.net/11536/144348-
dc.description.abstractAmorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, mu(FE) similar to 22.30 cm(2)/Vs, and sub-threshold swing, SS similar to 0.36 V/decade) and stable electrical behavior (PBS value shift, Delta V-th similar to 1.23 V) than the IZO (mu(FE) similar to 19.90 cm(2)/Vs, SS similar to 0.46 V/decade, Delta V-th similar to 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays. (C) 2017 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSputteringen_US
dc.subjectSemiconductoren_US
dc.subjectThin filmsen_US
dc.titleElectrical performance and stability of tungsten indium zinc oxide thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matlet.2017.12.020en_US
dc.identifier.journalMATERIALS LETTERSen_US
dc.citation.volume214en_US
dc.citation.spage293en_US
dc.citation.epage296en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000419724400077en_US
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