完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Guan-Fuen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Hua-Maoen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorChen, Hong-Chihen_US
dc.contributor.authorLi, Cheng-Yaen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorHung, Yu-Juen_US
dc.contributor.authorChang, Kuo-Juien_US
dc.contributor.authorCheng, Kai-Chungen_US
dc.contributor.authorHuang, Chen-Shuoen_US
dc.contributor.authorChen, Kuo-Kuangen_US
dc.contributor.authorLu, Hsueh-Hsingen_US
dc.contributor.authorLin, Yu-Hsinen_US
dc.date.accessioned2018-08-21T05:53:12Z-
dc.date.available2018-08-21T05:53:12Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2017.2657546en_US
dc.identifier.urihttp://hdl.handle.net/11536/144386-
dc.description.abstractThis letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.en_US
dc.language.isoen_USen_US
dc.subjectTop gate TFTsen_US
dc.subjectindium gallium zinc oxide (IGZO)en_US
dc.subjectdual channelen_US
dc.subjecthumpen_US
dc.titleAbnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2017.2657546en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume38en_US
dc.citation.spage334en_US
dc.citation.epage337en_US
dc.contributor.department交大-IBM智慧物聯網與巨量資料分析研發中心zh_TW
dc.identifier.wosnumberWOS:000395878000012en_US
顯示於類別:期刊論文