完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Guan-Fu | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Chen, Hua-Mao | en_US |
dc.contributor.author | Chen, Bo-Wei | en_US |
dc.contributor.author | Chen, Hong-Chih | en_US |
dc.contributor.author | Li, Cheng-Ya | en_US |
dc.contributor.author | Tai, Ya-Hsiang | en_US |
dc.contributor.author | Hung, Yu-Ju | en_US |
dc.contributor.author | Chang, Kuo-Jui | en_US |
dc.contributor.author | Cheng, Kai-Chung | en_US |
dc.contributor.author | Huang, Chen-Shuo | en_US |
dc.contributor.author | Chen, Kuo-Kuang | en_US |
dc.contributor.author | Lu, Hsueh-Hsing | en_US |
dc.contributor.author | Lin, Yu-Hsin | en_US |
dc.date.accessioned | 2018-08-21T05:53:12Z | - |
dc.date.available | 2018-08-21T05:53:12Z | - |
dc.date.issued | 2017-03-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2017.2657546 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144386 | - |
dc.description.abstract | This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Top gate TFTs | en_US |
dc.subject | indium gallium zinc oxide (IGZO) | en_US |
dc.subject | dual channel | en_US |
dc.subject | hump | en_US |
dc.title | Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2017.2657546 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.spage | 334 | en_US |
dc.citation.epage | 337 | en_US |
dc.contributor.department | 交大-IBM智慧物聯網與巨量資料分析研發中心 | zh_TW |
dc.identifier.wosnumber | WOS:000395878000012 | en_US |
顯示於類別: | 期刊論文 |