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dc.contributor.authorLee, Ya-Juen_US
dc.contributor.authorYang, Zu-Poen_US
dc.contributor.authorChen, Pin-Guangen_US
dc.contributor.authorHsieh, Yung-Anen_US
dc.contributor.authorYao, Yung-Chien_US
dc.contributor.authorLiao, Ming-Hanen_US
dc.contributor.authorLee, Min-Hungen_US
dc.contributor.authorWang, Mei-Tanen_US
dc.contributor.authorHwang, Jung-Minen_US
dc.date.accessioned2018-08-21T05:53:12Z-
dc.date.available2018-08-21T05:53:12Z-
dc.date.issued2018-01-22en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.26.00A110en_US
dc.identifier.urihttp://hdl.handle.net/11536/144392-
dc.description.abstractWe present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment" [Opt. Express 22, A1589 (2014)]. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen_US
dc.language.isoen_USen_US
dc.titleMonolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: replyen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.26.00A110en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume26en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000422935900003en_US
顯示於類別：期刊論文


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