標題: Impact of Doping Concentration on Electronic Properties of Transition Metal-Doped Monolayer Molybdenum Disulfide
作者: Tsai, Yi-Chia
Li, Yiming
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: 2-D materials;doping;electronics structure;first-principles calculation;molybdenum disulfide
公開日期: 1-Feb-2018
摘要: Doping engineering has been an emerging topic in monolayer molybdenum disulfide (mMoS(2)). However, the dopants used for an n-or p-type device and the effect of doping level are of great interests toward nextgeneration electronic devices. In this paper, we theoretically reveal the work function tunability of mMoS(2) doped by 3d transition metals. We found that the titanium dopant forms a deep-level trap in the midgap of mMoS(2) but turning into n-type donor levels in high doping concentration due to the stronger covalent bond and the stable surface morphology, which renders it the widest work function tunability among 3d transitionmetals. Overall, the n-typebehavior is expected by doping with chromium, copper, scandium, and titanium, whereas nickel and zinc dopants lead to the p-type property. The findings feature the selection of dopants for the revolutionary device and highlight the impact of doping levels from the atomistic viewpoint.
URI: http://dx.doi.org/10.1109/TED.2017.2782667
http://hdl.handle.net/11536/144406
ISSN: 0018-9383
DOI: 10.1109/TED.2017.2782667
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 65
起始頁: 733
結束頁: 738
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