完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Shih-Haoen_US
dc.contributor.authorChen, Wei-Zenen_US
dc.date.accessioned2018-08-21T05:53:16Z-
dc.date.available2018-08-21T05:53:16Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2016.2639534en_US
dc.identifier.urihttp://hdl.handle.net/11536/144475-
dc.description.abstractThis paper describes the design of a 25 Gb/s energy-efficient CMOS optical receiver with high input sensitivity. By incorporating a current-boosting preamplifier with a dual-path time-interleaved integrating-type optical receiver, it provides 1:2 demultiplexing operation with a tolerance to lower bandwidth photodiodes. The bandwidth of current amplifier is chosen as 0.35x operating data rate for maximizing the receiver signal-to-noise ratio. Experimental results show that the receiver can achieve 25 Gb/s operation when integrated with a 9 or 17 GHz GaAs photodiode. Input sensitivities in the two cases are -7.2 dBm (w/i a 9 GHz photodiode) and -10.8 dBm (w/i a 17 GHz photodiode), respectively, for a bit error rate of less than 10(-12). In addition, a single-tap decision-feedback equalizer (DFE) is embedded to compensate photodiode bandwidth and improve input sensitivity. Integrated with a low-cost 9 GHz photodiode, the input sensitivity and timing margin of the receiver are improved by 2 dB and 0.25 UI, respectively, after DFE compensation. By utilizing a current integrator and time-interleaved comparators, its energy efficiency is 1.13 pJ/b at 25 Gb/s under a 1.2 V power supply. Fabricated in a 40 nm bulk-CMOS technology, the core circuit occupies a chip area of 0.007 mm(2) only.en_US
dc.language.isoen_USen_US
dc.subjectComparatoren_US
dc.subjectcurrent amplifier (CA)en_US
dc.subjectdecision-feedback equalizer (DFE)en_US
dc.subjectintegrating-type receiveren_US
dc.subjectoptical receiveren_US
dc.subjectphotodetectoren_US
dc.titleA 25 Gb/s 1.13 pJ/b-10.8 dBm Input Sensitivity Optical Receiver in 40 nm CMOSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSSC.2016.2639534en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume52en_US
dc.citation.spage747en_US
dc.citation.epage756en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000396113900011en_US
顯示於類別:期刊論文