標題: | A high-speed 850-nm optical receiver by integrating Si photodiode and CMOS IC |
作者: | Hsin, Y. M. Huang, W. K. Liu, Y. C. Yan, B. E. Chen, W. Z. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Si;850-nm;optical receiver;CMOS;photodiode |
公開日期: | 1-一月-2008 |
摘要: | In this work, three approaches are proposed to implement high-speed 850-nm optical receivers fully in standard bulk 0.18 pm silicon (Si) CMOS technology. In the first approach, the lateral p-i-n photodiode (PD) with designed block well to limit the photocarriers being generated from the laterally depleted regions is integrated in optical receiver. The receiver consists of TIA, LA, offset-cancellation-network and buffer to provide a conversion gain of 110 dB Omega and data rate of 2.5 Gbps operation. In the second receiver, the spatially modulated PD (SMPD) with -3 dB bandwidth of 590 MHz is integrated in optical receiver with the extra adaptive equalizer and demonstrates a data rate of 3.125 Gbps. Finally, the proposed novel structure of PD eliminates the slow diffusion photocarriers by using body contact design to create a new current path under the PD. A bandwidth of 2.8 GHz with 100 % improvement in PD is obtained. The eye diagrams of PD with cable connected amplifiers at 2.5 Gbps, 4 Gbps and 5 Gbps are demonstrated. Furthermore, the optical receiver's optical-electrical (O-E) conversion bandwidth is also increased from 3.6 GHz to 4.3 GHz. To our knowledge, these are the highest O-E conversion bandwidth of the PD and optical receiver ever reported by using the standard bulk 0.18 mu m Si CMOS technology. |
URI: | http://dx.doi.org/10.1117/12.761553 http://hdl.handle.net/11536/146744 |
ISBN: | 978-0-8194-7074-4 |
ISSN: | 0277-786X |
DOI: | 10.1117/12.761553 |
期刊: | PHOTONICS PACKAGING, INTEGRATION, AND INTERCONNECTS VIII |
Volume: | 6899 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 會議論文 |