標題: Effect of Selenization Processes on CIGS Solar Cell Performance
作者: Wu, C. H.
Wu, P. W.
Chen, J. H.
Kao, J. Y.
Hsu, C. Y.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: CIGS;Selenization;Annealing Time;TEM
公開日期: 1-Jul-2018
摘要: Cu(In, Ga)Se-2 (CIGS) films were fabricated by a two-step process method using sputtering from Cu0.7Ga0.3 and In targets. The metallic precursor structures of In/CuGa/In were prepared, and CuGa film was adjusted to the thicknesses of 150, 200, 250 and 300 nm, in order to optimize the CIGS film. After selenization, three independent CIGS (112), CIGS (220/204) and CIGS (312/116) began to crystallize at similar to 280 degrees C and phase peaks continued growing until 560 degrees C. Experimental results showed that with a single stage selenization method, the excessive stoichiometry of the CIGS films was obtained. Using three sequential stages for the selenization process, with a annealing time of 20 min, the stoichiometry of the CIGS absorbers with the Cu/(In + Ga) and Ga/(In + Ga) showed atomic ratios of 0.94 and 0.34, respectively. The intensity of the (112) XRD diffraction peak became stronger, indicating an improvement in the crystallinity. Raman spectra of CIGS absorbers showed a main peak (174 cm(-1)) and two weak signals (212 and 231 cm(-1)). TEM image for electron diffraction pattern showed that the grains were randomly oriented. CIGS solar cell device prepared with a proper selenization, a maximum efficiency of 12.45% was obtained.
URI: http://dx.doi.org/10.1166/jnn.2018.15279
http://hdl.handle.net/11536/144593
ISSN: 1533-4880
DOI: 10.1166/jnn.2018.15279
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 18
起始頁: 5074
結束頁: 5081
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