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dc.contributor.authorLiao, Chan-Yuen_US
dc.contributor.authorChen, Shih-Hungen_US
dc.contributor.authorHuang, Wen-Hsienen_US
dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2018-08-21T05:53:24Z-
dc.date.available2018-08-21T05:53:24Z-
dc.date.issued2018-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2018.2791506en_US
dc.identifier.urihttp://hdl.handle.net/11536/144639-
dc.description.abstractThis letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grainswith a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from unmelted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect holemobility of 447 cm(2)V(-1)s(-1) with minor performance deviation.en_US
dc.language.isoen_USen_US
dc.subjectGermanium (Ge)en_US
dc.subjectexcimer laser crystallization (ELC)en_US
dc.subjectlocation-controlledgrain boundary (LCGB)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.titleHigh-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2018.2791506en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume39en_US
dc.citation.spage367en_US
dc.citation.epage370en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000426794100010en_US
Appears in Collections:Articles