標題: Self-Reset Transient Detection Circuit for On-Chip Protection Against System-Level Electrical-Transient Disturbance
作者: Kang, Xiao-Rui
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrical-fast-transient (EFT) test;electromagnetic susceptibility (EMS);electrostatic discharge (ESD);system-level ESD test;transient detection circuit
公開日期: 1-Mar-2018
摘要: A new self-reset transient detection circuit for on-chip protection against a system-level electrical-transient disturbance is proposed. This circuit is designed to detect the occurrence of system-level electrical-transient disturbance events, and automatically reset the system to initial state for the next detection. In addition, the reset time can be adjusted to meet the different requests of system recovery time in microelectronic products. The circuit performance has been investigated by HSPICE simulation and verified in silicon chip. The experiment results in a 0.18-mu m complementary metal-oxide semiconductor (CMOS) process with 1.8-V devices have confirmed the detection and self-reset functions of the proposed on-chip self-reset transient detection circuit under system-level electrostatic discharge and electrical-fast-transient testing conditions. With firmware co-design, the proposed detection circuit can provide an effective on-chip solution to recover the microelectronic system from the system-level transient disturbance-induced abnormal state to a known stable state. Therefore, the immunity level of microelectronic products equipped with CMOS integrated circuits against electromagnetic susceptibility can be effectively enhanced.
URI: http://dx.doi.org/10.1109/TDMR.2018.2805184
http://hdl.handle.net/11536/144667
ISSN: 1530-4388
DOI: 10.1109/TDMR.2018.2805184
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 18
起始頁: 114
結束頁: 121
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