完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | You, Wei-Xiang | en_US |
dc.contributor.author | Tsai, Chih-Peng | en_US |
dc.contributor.author | Su, Pin | en_US |
dc.date.accessioned | 2018-08-21T05:53:27Z | - |
dc.date.available | 2018-08-21T05:53:27Z | - |
dc.date.issued | 2018-04-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2018.2805716 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144702 | - |
dc.description.abstract | Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and henceneeds to be carefully taken into account. Our studymay provide insights for device design using negative-capacitance FETs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 2D semiconductors | en_US |
dc.subject | ferroelectric FET | en_US |
dc.subject | high-k gate dielectrics | en_US |
dc.subject | Landau-Khalatnikov(L-K) equation | en_US |
dc.subject | negative-capacitance field-effect transistor (NCFET) | en_US |
dc.subject | short-channel effects | en_US |
dc.subject | subthreshold model | en_US |
dc.subject | transition-metal-dichalcogenide (TMD) | en_US |
dc.title | Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2018.2805716 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 65 | en_US |
dc.citation.spage | 1604 | en_US |
dc.citation.epage | 1610 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000427856300050 | en_US |
顯示於類別: | 期刊論文 |