標題: Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices
作者: Liao, P. H.
Peng, K. P.
Lin, H. C.
George, T.
Li, P. W.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOS;germanium quantum dot;SiGe;self-organization;channel engineering;strain engineering
公開日期: 18-May-2018
摘要: We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5-95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5-4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1-xGex shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1-xGex shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core 'building block' required for the fabrication of Ge-based MOS devices.
URI: http://dx.doi.org/10.1088/1361-6528/aab17b
http://hdl.handle.net/11536/144704
ISSN: 0957-4484
DOI: 10.1088/1361-6528/aab17b
期刊: NANOTECHNOLOGY
Volume: 29
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