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dc.contributor.authorLee, Szu-Pingen_US
dc.contributor.authorChan, Ting-Shanen_US
dc.contributor.authorDutta, Somritaen_US
dc.contributor.authorChen, Teng-Mingen_US
dc.date.accessioned2018-08-21T05:53:29Z-
dc.date.available2018-08-21T05:53:29Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c8ra01113cen_US
dc.identifier.urihttp://hdl.handle.net/11536/144756-
dc.description.abstractNovel Eu2+-activated BaGa2SiS6 and Ba2Ga8SiS16 thiogallate phosphors were prepared by solid-state reaction route. The BaGa2SiS6:Eu2+ phosphor generated a green emission upon excitation at 405 nm, whereas the Ba2Ga8SiS16:xEu(2+) phosphor could be tuned from cyan to green range with increasing Eu2+ concentration upon excitation at 365 nm. Additionally, the thermal luminescence properties of the thiogallate phosphors were investigated in the temperature range of 25 to 250 degrees C. A warm-white LED is fabricated using the combination of a 405 nm blue InGaN-based LED chip with the green-emitting BaGa2SiS6:0.01Eu(2+) phosphor, and red-emitting Sr2Si5N8:Eu2+ commercial phosphor with the CRI value of approximate to 88 and the CCT of 4213 K.en_US
dc.language.isoen_USen_US
dc.titleNovel Eu2+-activated thiogallate phosphors for white LED applications: structural and spectroscopic analysisen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c8ra01113cen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume8en_US
dc.citation.spage11725en_US
dc.citation.epage11730en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000428672500052en_US
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