標題: Nonlinear dependence of X-ray diffraction peak broadening in InxGa1-xSb epitaxial layers on GaAs substrates
作者: Sa Hoang Huynh
Minh Thien Huu Ha
Huy Binh Do
Tuan Anh Nguyen
Quang Ho Luc
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
公開日期: 1-四月-2018
摘要: The configuration of the interfacial misfit array at InxGa1-xSb/GaAs interfaces with different indium compositions and thicknesses grown by metalorganic chemical vapor deposition was systematically analyzed using X-ray diffraction (XRD) reciprocal space maps (RSMs). These analyses confirmed that the epilayer relaxation was mainly contributed to by the high degree of spatial correlation of the 90 degrees misfit array (correlation factors <0.01). The anisotropic peak-broadening aspect ratio was found to have a non-linear composition dependence as well as be thickness-dependent, related to the strain relaxation of the epilayer. However, the peak-broadening behavior in each RSM scan direction had different composition and thickness dependences. (c) 2018 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.11.045503
http://hdl.handle.net/11536/144763
ISSN: 1882-0778
DOI: 10.7567/APEX.11.045503
期刊: APPLIED PHYSICS EXPRESS
Volume: 11
顯示於類別:期刊論文