標題: Compact composite noise-reduction LNA for UWB WPAN and WBAN applications
作者: Lin, Chun-Yi
Liang, Ching-Piao
Tarng, Jenn-Hwan
Chung, Shyh-Jong
電信工程研究所
Institute of Communications Engineering
關鍵字: low noise amplifiers;microwave amplifiers;CMOS integrated circuits;ultra wideband communication;body area networks;personal area networks;compact composite noise-reduction LNA;UWB WPAN;WBAN;ultra-wideband low-noise amplifier;complementary metal-oxide-semiconductor technology;wireless personal area network;wireless body area network;power gain;frequency 3;1 GHz to 4;8 GHz;current 3 mA;voltage 1;5 V;size 180 nm
公開日期: 23-May-2018
摘要: An ultra-wideband (UWB) low-noise amplifier (LNA) implemented using 180nm complementary metal-oxide-semiconductor technology is presented for wireless personal area network (WPAN) and wireless body area network (WBAN). Increasing the resistance of the substrate resistor R-B reduces the noise factor. When additional substrate resistors and a composite feedback topology are employed, the proposed LNA can achieve both a 1.4dB reduction of the noise figure (NF) and a 4dB enhancement in power gain (PG). Over the operating frequency range from 3.1 to 4.8GHz, the LNA achieves a maximum PG of 14.5dB, a minimum NF of 1.5dB, and an input return loss of <10dB. The measured current consumption is 3mA with a 1.5V supply voltage. The active chip area is 0.008mm(2). The proposed 3.1-4.8GHz LNA has a superior NF, smaller active area, and the lowest dc power consumption compared with devices reported in the literature.
URI: http://dx.doi.org/10.1049/iet-map.2017.0624
http://hdl.handle.net/11536/144921
ISSN: 1751-8725
DOI: 10.1049/iet-map.2017.0624
期刊: IET MICROWAVES ANTENNAS & PROPAGATION
Volume: 12
起始頁: 903
結束頁: 908
Appears in Collections:Articles