標題: Comparison of Parasitic Capacitances of Packaged Cascode Gallium Nitride Field-efect Transistors
作者: Wu, Chih-Chiang
Jeng, Shyr-Long
機械工程學系
Department of Mechanical Engineering
關鍵字: gallium nitride;cascode;parasitic capacitance
公開日期: 1-Jan-2018
摘要: In this work, we examined the electrical characteristics of laboratory-fabricated cascode gallium nitride field-effect transistors (GaN FETs) and analyzed their parasitic capacitances. The calculated results were in good agreement with the experimental results and showed that commercial GaN FETs have superior switching performance, whereas laboratory-fabricated GaN FETs require further improvement.
URI: http://dx.doi.org/10.18494/SAM.2018.1746
http://hdl.handle.net/11536/144934
ISSN: 0914-4935
DOI: 10.18494/SAM.2018.1746
期刊: SENSORS AND MATERIALS
Volume: 30
Issue: 1
起始頁: 453
結束頁: 461
Appears in Collections:Articles