標題: Enhancing the Thermal Stability of GaSb Schottky-Barrier MOSFET With Pt Source/Drain
作者: Tsai, Ming-Li
Chang, Yun-Pin
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gallium antimonide;metal source/drain;platinum alloys;Schottky barriers
公開日期: 1-Jul-2018
摘要: In this study, a Pt/GaSb Schottky diode with impressive rectifying behavior is used for the first time in the fabrication of a GaSb p-channel Schottkybarrier metal-oxide-semiconductor field-effect transistor (MOSFET). A gate-last integration scheme was employed to fabricate the MOSFET. Compared with a MOSFET with a Ni-alloy source and drain (S/D), the MOSFET with a Pt-alloy S/D can endure higher thermal stress during atomic layer deposition at 250 degrees C for 1 h without significant junction degradation. This high endurance to thermal stress is because Pt alloy has a lower reactivity to GaSb and a higher crystallization temperature. As a result, a record high ON/OFF ratio of 3 x 10(4) is reported for the GaSb Schottky-barrier MOSFET; an effective hole mobility of approximately 82 cm(2)V(-1)s(-1) is achieved.
URI: http://dx.doi.org/10.1109/LED.2018.2838118
http://hdl.handle.net/11536/145205
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2838118
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 39
起始頁: 939
結束頁: 942
Appears in Collections:Articles