標題: Establishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodes
作者: Zhang, Zi-Hui
Tian, Kangkai
Chu, Chunshuang
Fang, Mengqian
Zhang, Yonghui
Bi, Wengang
Kuo, Hao-Chung
光電工程學系
Department of Photonics
公開日期: 9-Jul-2018
摘要: This work establishes the relationship between the electron energy and the electron concentration within the multiple quantum wells (MQWs) for AlGaN based deep ultraviolet light-emitting diodes (DUV LEDs). The electron energy of different values can be obtained by modulating the Si doping concentration in the n-AlGaN layer and/or engineering the polarization induced interface charges. The modulated Si doping concentration in the n-AlGaN layer will cause the interface depletion region within which the electric field can be generated and then tunes the electron energy. The polarization induced charges and the polarization induced electric field can be obtained by stepwisely reducing the AlN composition for the n-AlGaN layer along the [0001] orientation. We find that the electron concentration in the MQWs can be increased once the electron energy is reduced to a proper level, which correspondingly improves the external quantum efficiency (EQE) for DUV LEDs. According to our investigations, it is more advisable to adopt the n-AlGaN layer with the stepwise AlN composition, which can make both the EQE and the wall plug efficiency high. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI: http://dx.doi.org/10.1364/OE.26.017977
http://hdl.handle.net/11536/145246
ISSN: 1094-4087
DOI: 10.1364/OE.26.017977
期刊: OPTICS EXPRESS
Volume: 26
起始頁: 17977
結束頁: 17987
Appears in Collections:Articles