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dc.contributor.authorKobayashi, Takayoshien_US
dc.contributor.authorSundaram, Durgaen_US
dc.contributor.authorNakata, Kazuakien_US
dc.contributor.authorTsurui, Hiromichien_US
dc.date.accessioned2019-04-03T06:36:00Z-
dc.date.available2019-04-03T06:36:00Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn1083-3668en_US
dc.identifier.urihttp://dx.doi.org/10.1117/1.JBO.22.3.036011en_US
dc.identifier.urihttp://hdl.handle.net/11536/145294-
dc.description.abstractQualifications of intracellular structure were performed for the first time using the gray-level co-occurrence matrix (GLCM) method for images of cells obtained by resolution-enhanced photothermal imaging. The GLCM method has been used to extract five parameters of texture features for five different types of cells in mouse brain; pyramidal neurons and glial cells in the basal nucleus (BGl), dentate gyrus granule cells, cerebellar Purkinje cells, and cerebellar granule cells. The parameters are correlation, contrast, angular second moment (ASM), inverse difference moment (IDM), and entropy for the images of cells of interest in a mouse brain. The parameters vary depending on the pixel distance taken in the analysis method. Based on the obtained results, we identified that the most suitable GLCM parameter is IDM for pyramidal neurons and BGl, granule cells in the dentate gyrus, Purkinje cells and granule cells in the cerebellum. It was also found that the ASM is the most appropriate for neurons in the basal nucleus. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License.en_US
dc.language.isoen_USen_US
dc.subjectmicroscopyen_US
dc.subjectsuperresolutionen_US
dc.subjectneuronsen_US
dc.subjectcellsen_US
dc.subjectcell analysisen_US
dc.subjectimage analysisen_US
dc.titleGray-level co-occurrence matrix analysis of several cell types in mouse brain using resolution-enhanced photothermal microscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/1.JBO.22.3.036011en_US
dc.identifier.journalJOURNAL OF BIOMEDICAL OPTICSen_US
dc.citation.volume22en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000397944900026en_US
dc.citation.woscount2en_US
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