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dc.contributor.authorLuo, Zhicongen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorCheng, Wan-Hsuehen_US
dc.contributor.authorYen, Ting-Yangen_US
dc.date.accessioned2018-08-21T05:53:54Z-
dc.date.available2018-08-21T05:53:54Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn1549-8328en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSI.2016.2619693en_US
dc.identifier.urihttp://hdl.handle.net/11536/145304-
dc.description.abstractA regulated cross-couple charge pump with new charging current smoothing technique is proposed and verified in a 0.18-mu m 1.8-V/3.3-V CMOS process. The transient behaviors of 3-stage cross-couple charge pump and the expressions for the charging current are described in detail. The experiment results show that the charging current ripples are reduced by a factor of three through using the proposed new clocking scheme. The voltage ripples in the power supply line, which is connected with the charge pump input, are also smoothed greatly as the filter circuit does. The proposed scheme is used to decrease the smoothing capacitance in the power line of charge pump for reducing the size of implantable devices in biomedical application. In addition, the power efficiency is improved. The proposed cross-couple charge pump can provide 10.5-V output voltage with 3.5-mA output current, and the power efficiency of the charge pump can be up to 69%.en_US
dc.language.isoen_USen_US
dc.subjectCharge pumpen_US
dc.subjectcharging current ripplesen_US
dc.subjecthigh-voltage-toleranten_US
dc.subjectpeak currenten_US
dc.subjectpower efficiencyen_US
dc.subjecttransient behaviorsen_US
dc.titleRegulated Charge Pump With New Clocking Scheme for Smoothing the Charging Current in Low Voltage CMOS Processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSI.2016.2619693en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERSen_US
dc.citation.volume64en_US
dc.citation.spage528en_US
dc.citation.epage536en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department生醫電子轉譯研究中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentBiomedical Electronics Translational Research Centeren_US
dc.identifier.wosnumberWOS:000398129500003en_US
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