標題: Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
作者: Hsu, Ching-Hsiang
Shih, Wang-Cheng
Lin, Yueh-Chin
Hsu, Heng-Tung
Hsu, Hisang-Hua
Huang, Yu-Xiang
Lin, Tai-Wei
Wu, Chia-Hsun
Wu, Wen-Hao
Maa, Jer-Shen
Iwai, Hiroshi
Kakushima, Kuniyuki
Chang, Edward Yi
材料科學與工程學系
光電系統研究所
照明與能源光電研究所
影像與生醫光電研究所
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Institute of Photonic System
Institute of Lighting and Energy Photonics
Institute of Imaging and Biomedical Photonics
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
公開日期: 1-四月-2016
摘要: Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.04EG04
http://hdl.handle.net/11536/145317
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.04EG04
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
顯示於類別:期刊論文