Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

doi:10.7567/JJAP.55.04EG04

Title:	Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
Authors:	Hsu, Ching-Hsiang Shih, Wang-Cheng Lin, Yueh-Chin Hsu, Heng-Tung Hsu, Hisang-Hua Huang, Yu-Xiang Lin, Tai-Wei Wu, Chia-Hsun Wu, Wen-Hao Maa, Jer-Shen Iwai, Hiroshi Kakushima, Kuniyuki Chang, Edward Yi 材料科學與工程學系光電系統研究所照明與能源光電研究所影像與生醫光電研究所電子工程學系及電子研究所國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System Institute of Lighting and Energy Photonics Institute of Imaging and Biomedical Photonics Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology
Issue Date:	Apr-2016
Abstract:	Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated. (C) 2016 The Japan Society of Applied Physics
URI:	http://dx.doi.org/10.7567/JJAP.55.04EG04 http://hdl.handle.net/11536/135145
ISSN:	0021-4922
DOI:	10.7567/JJAP.55.04EG04
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS
Volume:	55
Issue:	4
Appears in Collections:	Conferences Paper