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dc.contributor.authorHsu, Ching-Hsiangen_US
dc.contributor.authorShih, Wang-Chengen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorHsu, Hisang-Huaen_US
dc.contributor.authorHuang, Yu-Xiangen_US
dc.contributor.authorLin, Tai-Weien_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorWu, Wen-Haoen_US
dc.contributor.authorMaa, Jer-Shenen_US
dc.contributor.authorIwai, Hiroshien_US
dc.contributor.authorKakushima, Kuniyukien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2017-04-21T06:48:55Z-
dc.date.available2017-04-21T06:48:55Z-
dc.date.issued2016-04en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.55.04EG04en_US
dc.identifier.urihttp://hdl.handle.net/11536/135145-
dc.description.abstractImproved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleImproved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectricen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.7567/JJAP.55.04EG04en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume55en_US
dc.citation.issue4en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000373929400084en_US
dc.citation.woscount1en_US
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