標題: Epitaxial growth of semipolar InN(10(1)over-tilde3) on LaAlO3 substrate: Epitaxial relationship analysis
作者: Chen, Wei-Chun
Kuo, Shou-Yi
Tian, Jr. -Sheng
Wang, Wei-Lin
Lai, Fang-I
Wu, Yue-Han
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-May-2017
摘要: Epitaxial semipolar InN(10 (1) over tilde3) crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be % 7.75% along the [1 (2) over tilde 10](InN) direction and 0.2% along the [(3) over tilde 032](InN) direction. The InN film is epitaxic with the LaAlO3 substrate, with orientation relationships between InN(10 (1) over tilde3) parallel to LaAlO3(112) and [1 (2) over tilde 10](InN) parallel to [11 (1) over tilde](LAO). InN grown on LaAlO3(112) appears (10 (1) over tilde3) plane orientated, with two types of domains. Semipolar InN(10 (1) over tilde3) layers can be grown at 510 degrees C and show X-ray rocking curve FWHMs of 1830 and 1408 arcsec for InN(0002) and InN(10 (1) over tilde3), respectively. However, InN grown at 510 degrees C has the highest peak intensity and the narrowest FWHM of the prepared samples, indicating high-quality crystal growth. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.56.055505
http://hdl.handle.net/11536/145415
ISSN: 0021-4922
DOI: 10.7567/JJAP.56.055505
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 56
Appears in Collections:Articles