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dc.contributor.authorKuan, Chin-Ien_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorLi, Pei-Wenen_US
dc.date.accessioned2018-08-21T05:54:11Z-
dc.date.available2018-08-21T05:54:11Z-
dc.date.issued2017-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2704440en_US
dc.identifier.urihttp://hdl.handle.net/11536/145636-
dc.description.abstractMotivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (mu(FE)) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (R-SD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces R-SD dramatically. This is evidenced by a significant reduction in R-SD from 30.1 to 14.4 k Omega. mu m measured on 0.5-mu m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in mu(FE) from 18.2 to 29.6 cm(2)/V.s.en_US
dc.language.isoen_USen_US
dc.subjectOxide semiconductorsen_US
dc.subjectseries source/drain (S/D) resistanceen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.subjectZnOen_US
dc.subjectZnONen_US
dc.titleImproving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contactsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2704440en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume64en_US
dc.citation.spage2849en_US
dc.citation.epage2853en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000403452900011en_US
Appears in Collections:Articles