標題: ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters
作者: Kuan, Chin-I
Peng, Kang-Ping
Lin, Horng-Chih
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2018
摘要: The inclusion of an ultra-thin zinc oxynitride (ZnON) layer inserted between the channel of InGaZnO (IGZO) and source/drain (S/D) metal of Al for an IGZO thin-film transistor (TFT) is demonstrated to improve device performance in terms of a reduction in S/D series resistance (RSD). The improvement is attributable to the elimination of an interfacial layer of AlOx which is inherently formed at the Al/IGZO interface, by the insertion of ZnON. Characteristics of 3D stacked-type inverters constructed by the IGZO TFTs with ZnON contacts have been also studied. Full-swing switching with voltage gains increases from 9.8V/V for the IGZO inverter without ZnON contacts to 12.3 V/V with ZnON contacts at an operating voltage of 5 V.
URI: http://hdl.handle.net/11536/150742
ISSN: 1930-8868
期刊: 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
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