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dc.contributor.authorKuan, Chin-Ien_US
dc.contributor.authorPeng, Kang-Pingen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorLi, Pei-Wenen_US
dc.date.accessioned2019-04-02T06:04:21Z-
dc.date.available2019-04-02T06:04:21Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn1930-8868en_US
dc.identifier.urihttp://hdl.handle.net/11536/150742-
dc.description.abstractThe inclusion of an ultra-thin zinc oxynitride (ZnON) layer inserted between the channel of InGaZnO (IGZO) and source/drain (S/D) metal of Al for an IGZO thin-film transistor (TFT) is demonstrated to improve device performance in terms of a reduction in S/D series resistance (RSD). The improvement is attributable to the elimination of an interfacial layer of AlOx which is inherently formed at the Al/IGZO interface, by the insertion of ZnON. Characteristics of 3D stacked-type inverters constructed by the IGZO TFTs with ZnON contacts have been also studied. Full-swing switching with voltage gains increases from 9.8V/V for the IGZO inverter without ZnON contacts to 12.3 V/V with ZnON contacts at an operating voltage of 5 V.en_US
dc.language.isoen_USen_US
dc.titleZnON Contacts Enabling High-performance 3-D InGaZnO Invertersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000444900700009en_US
dc.citation.woscount0en_US
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