Single-photon avalanche diodes in 0.18-mu m high-voltage CMOS technology

doi:10.1364/OE.25.013333

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, L. D.	en_US
dc.contributor.author	Wu, J. Y.	en_US
dc.contributor.author	Wang, J. P.	en_US
dc.contributor.author	Tsai, C. M.	en_US
dc.contributor.author	Huang, Y. H.	en_US
dc.contributor.author	Wu, D. R.	en_US
dc.contributor.author	Lin, S. D.	en_US
dc.date.accessioned	2019-04-03T06:44:35Z	-
dc.date.available	2019-04-03T06:44:35Z	-
dc.date.issued	2017-06-12	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.25.013333	en_US
dc.identifier.uri	http://hdl.handle.net/11536/145674	-
dc.description.abstract	We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-mu m high-voltage CMOS technology. Without any technology customization. the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications. (C) 2017 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Single-photon avalanche diodes in 0.18-mu m high-voltage CMOS technology	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.25.013333	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	25	en_US
dc.citation.issue	12	en_US
dc.citation.spage	13333	en_US
dc.citation.epage	13339	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000403942300045	en_US
dc.citation.woscount	5	en_US
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