標題: Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy
作者: Amrillah, Tahta
Bitla, Yugandhar
Shin, Kwangwoo
Yang, Tiannan
Hsieh, Ying-Hui
Chiou, Yu-You
Liu, Heng-Jui
Thi Hien Do
Su, Dong
Chen, Yi-Chun
Jen, Shien-Uang
Chen, Long-Qing
Kim, Kee Hoon
Juang, Jenh-Yih
Chu, Ying-Hao
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: magnetoelectric;bulk heterojunction;clamping effect;van der Waals epitaxy;flexible
公開日期: 1-Jun-2017
摘要: Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate damping effect still remains a major hurdle in realizing the ultimate magneto electric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. hi this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO3 (BFO)-CoFe2O4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate damping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm.Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.
URI: http://dx.doi.org/10.1021/acsnano.7b02102
http://hdl.handle.net/11536/145747
ISSN: 1936-0851
DOI: 10.1021/acsnano.7b02102
期刊: ACS NANO
Volume: 11
起始頁: 6122
結束頁: 6130
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