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dc.contributor.authorJiang, Jieen_US
dc.contributor.authorBitla, Yugandharen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorThi Hien Doen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorHsieh, Ying-Huien_US
dc.contributor.authorMa, Chun-Haoen_US
dc.contributor.authorJang, Chi-Yuanen_US
dc.contributor.authorLai, Yu-Hongen_US
dc.contributor.authorChiu, Po-Wenen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorZhou, Yi-Chunen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2019-04-03T06:43:07Z-
dc.date.available2019-04-03T06:43:07Z-
dc.date.issued2017-06-01en_US
dc.identifier.issn2375-2548en_US
dc.identifier.urihttp://dx.doi.org/10.1126/sciadv.1700121en_US
dc.identifier.urihttp://hdl.handle.net/11536/145838-
dc.description.abstractWe present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.en_US
dc.language.isoen_USen_US
dc.titleFlexible ferroelectric element based on van der Waals heteroepitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1126/sciadv.1700121en_US
dc.identifier.journalSCIENCE ADVANCESen_US
dc.citation.volume3en_US
dc.citation.issue6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000406370700049en_US
dc.citation.woscount23en_US
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