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dc.contributor.authorChang, Yung-Yehen_US
dc.contributor.authorMou, Chung-Yuen_US
dc.contributor.authorChung, Chung-Houen_US
dc.date.accessioned2019-04-03T06:44:04Z-
dc.date.available2019-04-03T06:44:04Z-
dc.date.issued2017-08-17en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.96.054514en_US
dc.identifier.urihttp://hdl.handle.net/11536/145932-
dc.description.abstractThe Andreev conductance across realistic two-dimensional (2D) normal-metal (N)/superconductor (SC) junctions with a relativistic Dirac spectrum is theoretically investigated within the Blonder-Tinkham-Klapwijk formalism with tunable tunneling transparency. It is known that due to the effect of Klein tunneling, impurity potentials at the interface of 2D relativistic materials will enhance (not suppress) the tunneling and therefore are not suitable to model a realistic tunnel junction of these materials. Here, we propose a way to construct a more realistic tunnel junction by adding a narrow, homogeneous local strain, which effectively generates a delta-gauge potential and variations of electron hopping at the interface, to adjust the transparency of the N/SC junction. Remarkable suppression of the Andreev conductance is indeed observed in the graphene N/SC junction as the strength of the local strain increases. We also explore the Andreev conductance in a topological N/SC junction at the two inequivalent Dirac points and predict the distinctive behaviors for the conductance across the chiral-to-helical topological phase transition. The relevance of our results for the adatom-doped graphene is discussed.en_US
dc.language.isoen_USen_US
dc.titleAndreev reflection in two-dimensional relativistic materials with realistic tunneling transparency in normal-metal/superconductor junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.96.054514en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume96en_US
dc.citation.issue5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000407777600004en_US
dc.citation.woscount2en_US
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