標題: N-Channel Zinc Oxide Nanowire: Perylene Diimide Blend Organic Thin Film Transistors
作者: Chen, Shin-Pin
Chen, Yan-Sheng
Hsieh, Gen-Wen
照明與能源光電研究所
影像與生醫光電研究所
Institute of Lighting and Energy Photonics
Institute of Imaging and Biomedical Photonics
關鍵字: Organic thin film transistors;zinc oxide nanowire: perylene diimide blend;solution process;n-channel
公開日期: 1-Sep-2017
摘要: N-channel solution-processed organic thin film transistors (TFTs) based on a blend network of N,N`-bis(1H,1H-perfluorobutyl)-1,7-dicyanoperylene-3,4: 9,10-tetracarboxylic diimide (PDIF-CN2) and zinc oxide (ZnO) nanowires show remarkable electron field effect mobilities of up to 0.5 cm(2)/ V.s in ambient air, which is about five-fold higher than those based on pristine PDIF-CN2 films. When tested in both bias directions the output and transfer electrical hysteresis of those blend TFTs are negligible. In addition, their low processing temperature and flexible semiconducting layer makes them a highly promising means of realizing high performance, solution-processed n-channel organic TFTs.
URI: http://dx.doi.org/10.1109/JEDS.2017.2711570
http://hdl.handle.net/11536/145974
ISSN: 2168-6734
DOI: 10.1109/JEDS.2017.2711570
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 5
Issue: 5
起始頁: 367
結束頁: 371
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