Growth of GaN on {12(3)over-bar5}-like Facets of Patterned Sapphire Substrate

Abstract

GaN has been grown on wet-etched patterned sapphire substrate (PSS) by metal-organic chemical vapor deposition. It has been found that GaN was initiated not only from bottom c-facet but also from E {12 (3) over bar5} facets of hexagonal patterns/pyramids. In this study, a vacancy-PSS on c-plane sapphire was used to investigate the growth of GaN on the E-like facets (E1 and E2) of distorted pyramids. The results show that the orientation relationship between E1-GaN and sapphire is ((11) over bar2 (6) over bar) GaN // ((1) over bar 10 (2) over bar)(sapphire) and [11 (21) over bar] GaN // [11 (2) over bar0](sapphire). At the same time, that between E2-GaN and sapphire is (01 (14) over bar) GaN // (3 (3) over bar0 (6) over bar) sapphire and [02 (2) over bar1] GaN // [11 (2) over bar0] sapphire. (C) 2017 The Electrochemical Society. All rights reserved.