標題: High Mobility Tungsten-Doped Thin-Film Transistor on Polyimide Substrate with Low Temperature Process
作者: Ruan, Dun-Bao
Liu, Po-Tsun
Chiu, Yu-Chuan
Yu, Min-Chin
Gan, Kai-jhih
Chien, Ta-Chun
Kuo, Po-Yi
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: IWO;TFT;Polyimide
公開日期: 1-Jan-2018
摘要: A novel high mobility channel material, amorphous tungsten doped indium-oxide, is used as the active layer of flexible TFT, which is fabricated on a transparent polyimide under a low temperature process. The effects of channel thickness are investigated as well in this work. The flexible TFT with a suitable thickness of IWO film shows a high carrier mobility and low sub-threshold swing. The improvement can be attributed to increased donor-like oxygen vacancy with the thickness of channel layer increased.
URI: http://hdl.handle.net/11536/146243
ISSN: 2378-8593
期刊: 2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)
起始頁: 367
結束頁: 368
Appears in Collections:Conferences Paper