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dc.contributor.authorChao, Mango C. -T.en_US
dc.contributor.authorChin, Ching-Yuen_US
dc.contributor.authorTsou, Yao-Teen_US
dc.contributor.authorChang, Chi-Minen_US
dc.date.accessioned2014-12-08T15:20:32Z-
dc.date.available2014-12-08T15:20:32Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2010.2087044en_US
dc.identifier.urihttp://hdl.handle.net/11536/14628-
dc.description.abstractThe NROM technology is an emerging non-volatile-memory technology providing high data density with low fabrication cost. In this paper, we propose a novel test flow for the one-time-programming (OTP) applications using the NROM bit cells. Unlike the conventional test flow, the proposed flow applies the repair analysis in its package test instead of in its wafer test, and hence creates a chance for reusing the bit cells originally identified as a defect to represent the value in the OTP application. Thus, the proposed test flow can reduce the number of bit cells to be repaired and further improve the yield. Also, we propose an efficient and effective estimation scheme to predict the probability of a part being successfully repaired before packaged. This estimation can be used to determine whether a part should be packaged, such that the total profit of the proposed test flow can be optimized. A series of experiments are conducted to demonstrate the effectiveness, efficiency, and feasibility of the proposed test flow.en_US
dc.language.isoen_USen_US
dc.subjectNROMen_US
dc.subjectrepair rate estimationen_US
dc.subjecttest flowen_US
dc.titleA Novel Test Flow for One-Time-Programming Applications of NROM Technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2010.2087044en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume19en_US
dc.citation.issue12en_US
dc.citation.spage2170en_US
dc.citation.epage2183en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000296459300004-
dc.citation.woscount2-
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