Oxygen sensors made by monolayer graphene

Abstract

The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O-2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cmx1cm will attach O-2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O-2 concentration and the detection limit of the simple O-2 sensor was 1.25% in volume ratio.