Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors

doi:10.1149/1.3567624

標題:	Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors
作者:	Kanda, T. Zade, D. Lin, Y. -C. Kakushima, K. Ahmet, P. Tsutsui, K. Nishiyama, A. Sugii, N. Chang, E. Y. Natori, K. Hattori, T. Iwai, H. 交大名義發表 National Chiao Tung University
公開日期:	1-Jan-2011
摘要:	The electrical characteristics of InGaAs MOS capacitors with 8-nm-thick La2O3 gate dielectrics have been measured. The effects of annealing temperature and annealing time on the interface state densities (D-it) have been extracted. It has been found that the low Dit can be achieved by lowering the annealing temperature for an extended period of time.
URI:	http://dx.doi.org/10.1149/1.3567624 http://hdl.handle.net/11536/146316
ISSN:	1938-5862
DOI:	10.1149/1.3567624
期刊:	CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011)
Volume:	34
起始頁:	483
結束頁:	487
Appears in Collections:	Conferences Paper