標題: | Design of Integrated Gate Driver With Threshold Voltage Drop Cancellation in Amorphous Silicon Technology for TFT-LCD Application |
作者: | Chu, Li-Wei Liu, Po-Tsun Ker, Ming-Dou 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | Amorphous silicon (a-Si);gate driver;thin-film transistor liquid-crystal display (TFT-LCD) |
公開日期: | 1-十二月-2011 |
摘要: | A new integrated gate driver has been successfully designed and fabricated by amorphous silicon (a-Si) technology for a 3.8-in WVGA (800 x RGB x 480) TFT-LCD panel. With the proposed threshold voltage drop-cancellation technique, the output rise time of the proposed integrated gate driver can be substantially decreased by 24.6% for high-resolution display application. Moreover, the proposed noise reduction path between the adjacent gate drivers can reduce the layout area for slim bezel display. The transmittance brightness and contrast ratio of the demonstrated 3.8-inch panel show almost no degradation after the 500 h operation under 70 degrees C and -20 degrees C conditions. |
URI: | http://dx.doi.org/10.1109/JDT.2011.2162937 http://hdl.handle.net/11536/14634 |
ISSN: | 1551-319X |
DOI: | 10.1109/JDT.2011.2162937 |
期刊: | JOURNAL OF DISPLAY TECHNOLOGY |
Volume: | 7 |
Issue: | 12 |
起始頁: | 657 |
結束頁: | 664 |
顯示於類別: | 期刊論文 |