標題: Design of Integrated Gate Driver With Threshold Voltage Drop Cancellation in Amorphous Silicon Technology for TFT-LCD Application
作者: Chu, Li-Wei
Liu, Po-Tsun
Ker, Ming-Dou
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Amorphous silicon (a-Si);gate driver;thin-film transistor liquid-crystal display (TFT-LCD)
公開日期: 1-Dec-2011
摘要: A new integrated gate driver has been successfully designed and fabricated by amorphous silicon (a-Si) technology for a 3.8-in WVGA (800 x RGB x 480) TFT-LCD panel. With the proposed threshold voltage drop-cancellation technique, the output rise time of the proposed integrated gate driver can be substantially decreased by 24.6% for high-resolution display application. Moreover, the proposed noise reduction path between the adjacent gate drivers can reduce the layout area for slim bezel display. The transmittance brightness and contrast ratio of the demonstrated 3.8-inch panel show almost no degradation after the 500 h operation under 70 degrees C and -20 degrees C conditions.
URI: http://dx.doi.org/10.1109/JDT.2011.2162937
http://hdl.handle.net/11536/14634
ISSN: 1551-319X
DOI: 10.1109/JDT.2011.2162937
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 7
Issue: 12
起始頁: 657
結束頁: 664
Appears in Collections:Articles


Files in This Item:

  1. 000296132300006.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.