標題: A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FET
作者: Tang, Ying-Tsan
Li, Kai-Shin
Li, Lain-Jong
Li, Ming-Yang
Lin, Chang-Hsien
Chen, Yi-Ju
Chen, Chun-Chi
Su, Chuan-Jung
Wu, Bo-Wei
Wu, Cheng-San
Chen, Min-Cheng
Shieh, Jia-Min
Yeh, Wen-Kuan
Su, Po-Cheng
Wang, Tahui
Yang, Fu-Liang
Hu, Chenming
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 1-Jan-2016
摘要: An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2 channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSx junction of dichalcogenide vacancies enables Si-MoS2 contact resistance lower than 100 Omega-mu m for interface Schottky barrier height reduction. The compact Si-MoS2 interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.
URI: http://hdl.handle.net/11536/146472
ISSN: 2380-9248
期刊: 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Appears in Collections:Conferences Paper