標題: | Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes |
作者: | Wang, Yu-Shou Chen, Nai-Chuan Lu, Chun-Yi Chen, Jenn-Fang 電子物理學系 Department of Electrophysics |
關鍵字: | InGaN/GaN;Light-emitting diodes (LEDs);Piezoelectric;Localized states;Carrier screening |
公開日期: | 15-十一月-2011 |
摘要: | The optical joint densities of states of three InGaN/GaN-based light-emitting diodes with different emission wavelengths (violet, blue and green) operated at various currents were investigated. The results indicate that the blueshift of the emission with increasing current is related to the variation in optical joint density of states. Thus, the blueshift is ascribed to the screening of the piezoelectric field by carriers. A tail at the low-energy end of the density of states, corresponding to localized states, was found, and the presence of these tails broadens the spectra of the devices. (C) 2011 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.physb.2011.08.071 http://hdl.handle.net/11536/14651 |
ISSN: | 0921-4526 |
DOI: | 10.1016/j.physb.2011.08.071 |
期刊: | PHYSICA B-CONDENSED MATTER |
Volume: | 406 |
Issue: | 22 |
起始頁: | 4300 |
結束頁: | 4303 |
顯示於類別: | 期刊論文 |