A LOW TEMPERATURE INKJET PRINTING AND FILLING PROCESS FOR LOW RESISTIVE SILVER TSV FABRICATION IN A SU-8 SUBSTRATE

Abstract

The paper presents a low temperature (with 60 degrees C) inkjet printing and filling process to realize low resistive Ag TSV (Through Substrate Vias) with the aspect ratio of via depth vs. diameter from 2 to 5 in a SU-8 substrate potential for flexible microsystem packaging applications. Combining humidity control and layer-by-layer Ag mirror reaction, the proposed process technology can accomplish a fully filled TSV with the lowest electrical resistivity of similar to 450 mu Omega.cm in comparison with the prior printing and filling technologies.