標題: Evaluation of Analog Performance of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) MOSFETs
作者: Lee, Hung-Yi
Yu, Chang-Hung
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2017
摘要: We investigate the analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs. The device analog metrics including the transconductance (g(m)), output resistance (R-o) and intrinsic gain (g(m) x R-o) for TMD device are investigated using 3D atomistic TCAD simulations. It is shown that bilayer TMD devices exhibit better analog performance compared with monolayer TMD devices. The impacts of different mobility ratios of bilayer TMD devices to monolayer TMD devices are examined.
URI: http://hdl.handle.net/11536/146757
ISSN: 1930-8868
期刊: 2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
Appears in Collections:Conferences Paper