Title: Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory
Authors: Fan, Chia-Chi
Chiu, Yu-Chien
Liu, Chien
Liou, Guan-Lin
Lai, Wen-Wei
Chen, Yi-Ru
Cheng, Chun-Hu
Chang, Chun-Yen
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Keywords: Ferroelectric domain;HfZrO and HfON
Issue Date: 1-Jan-2017
Abstract: In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.
URI: http://hdl.handle.net/11536/146769
Journal: 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)
Begin Page: 224
End Page: 225
Appears in Collections:Conferences Paper