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dc.contributor.authorChen, C. C.en_US
dc.contributor.authorLin, Y. S.en_US
dc.contributor.authorSang, C. H.en_US
dc.contributor.authorSheu, J. -T.en_US
dc.date.accessioned2014-12-08T15:20:40Z-
dc.date.available2014-12-08T15:20:40Z-
dc.date.issued2011-11-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl202539men_US
dc.identifier.urihttp://hdl.handle.net/11536/14687-
dc.description.abstractWe report a mask-free technique for the local synthesis of ZnO nanowires (NWs) on polysilicon nanobelts and polysilicon NW devices. First, we used localized joule heating to generate a poly(methyl methacrylate) (PMMA) nanotemplate, allowing the rapid and self-aligned ablation of PMMA within a short period of time (ca. S mu s). Next, we used ion-beam sputtering to prepare an ultrathin Au film and a ZnO seed layer; a subsequent lift-off process left the seed layers selectively within the PMMA nanotemplate. Gold nanoparticles and ZnO NWs were formed selectively in the localized joule heating region.en_US
dc.language.isoen_USen_US
dc.subjectNanobelten_US
dc.subjectnanowireen_US
dc.subjectnanoparticleen_US
dc.subjectZnOen_US
dc.subjectjoule heatingen_US
dc.titleLocalized Joule Heating As a Mask-Free Technique for the Local Synthesis of ZnO Nanowires on Silicon Nanodevicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl202539men_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume11en_US
dc.citation.issue11en_US
dc.citation.spage4736en_US
dc.citation.epage4741en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000296674700042-
dc.citation.woscount8-
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