標題: | Energy-Efficient HfAlOx NCFET: Using Gate Strain and Defect Passivation to Realize Nearly Hysteresis-Free Sub-25mV/dec Switch with Ultralow Leakage |
作者: | Fan, Chia-Chi Cheng, Chun-Hu Chen, Yi-Ru Liu, Chien Chang, Chun-Yen 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2017 |
摘要: | We experimentally demonstrated that ferroelectric HfAlOx negative capacitance FETs using gate strain and defect passivation can realize a nearly hysteresis-free forward/reverse swing of < 25 mV/dec for symmetric switch, a wide sub-60 mV/dec SS range over 4 decade of I-DS to reach an ultralow I-off of 4 fA/mu m, and a very high I-on/I-off ratio of > 10(8). Under the influence of gate strain and negative capacitance, the NCFETs exhibits 66% I-on enhancement and 27% V-T reduction. In addition, the fluorine defect passivation reduces oxygen vacancies of gate stack to further mitigate interface depolarization field and help to significantly reinforce surface potential amplification effect during NC operation. |
URI: | http://hdl.handle.net/11536/146909 |
ISSN: | 2380-9248 |
期刊: | 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) |
顯示於類別: | 會議論文 |